MRC | Criteria | Characteristic |
---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 1.400 MILLIMETERS MAXIMUM |
AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |
AKPV | MOUNTING FACILITY QUANTITY | 3 |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON ALLOY |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | -50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT UNIVERSAL |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 1.400 MILLIMETERS MAXIMUM |
AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |
AKPV | MOUNTING FACILITY QUANTITY | 3 |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON ALLOY |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | -50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT UNIVERSAL |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |