NSN 5961-01-463-0611 (5961014630611) Transistor Parts Catalog

The part belongs to NSN 5961-01-463-0611 is an Transistor produced by Nec Electronics Usa Inc Electron, Anritsu Company. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-463-0611 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Transistor made by Nec Electronics Usa Inc Electron, Anritsu Company that carries the NSN 5961-01-463-0611, you can rely on us to provide you with the necessary parts from our available inventory.

At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961014630611 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	GLASS
ABHP	OVERALL LENGTH	1.400 MILLIMETERS MAXIMUM
AGAV	END ITEM IDENTIFICATION	6625014252551E/IFSCM33297
AKPV	MOUNTING FACILITY QUANTITY	3
AXGY	MOUNTING METHOD	TERMINAL
CTMZ	III SEMICONDUCTOR MATERIAL	SILICON ALLOY
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CTQX	CURRENT RATING PER CHARACTERISTIC	-50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT UNIVERSAL
CTRD	POWER RATING PER CHARACTERISTIC	200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 DEG CELSIUS JUNCTION
TTQY	TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD
ABBH	INCLOSURE MATERIAL	GLASS
ABHP	OVERALL LENGTH	1.400 MILLIMETERS MAXIMUM
AGAV	END ITEM IDENTIFICATION	6625014252551E/IFSCM33297
AKPV	MOUNTING FACILITY QUANTITY	3
AXGY	MOUNTING METHOD	TERMINAL
CTMZ	III SEMICONDUCTOR MATERIAL	SILICON ALLOY
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CTQX	CURRENT RATING PER CHARACTERISTIC	-50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT UNIVERSAL
CTRD	POWER RATING PER CHARACTERISTIC	200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE
CTSG	MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 DEG CELSIUS JUNCTION
TTQY	TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

MRC

Criteria

Characteristic

ABBH

INCLOSURE MATERIAL

GLASS

ABHP

OVERALL LENGTH

1.400 MILLIMETERS MAXIMUM

AGAV

END ITEM IDENTIFICATION

6625014252551E/IFSCM33297

AKPV

MOUNTING FACILITY QUANTITY

AXGY

MOUNTING METHOD

TERMINAL

CTMZ

III SEMICONDUCTOR MATERIAL

SILICON ALLOY

CTQN

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC

-15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -15.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -4.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN

CTQX

CURRENT RATING PER CHARACTERISTIC

-50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM AND -100.00 NANOAMPERES SOURCE CUTOFF CURRENT UNIVERSAL

CTRD

POWER RATING PER CHARACTERISTIC

200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE

CTSG

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT

150.0 DEG CELSIUS JUNCTION

TTQY

TERMINAL TYPE AND QUANTITY

3 UNINSULATED WIRE LEAD