MRC | Criteria | Characteristic |
---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 3.620 INCHES NOMINAL |
ABKW | OVERALL HEIGHT | 1.125 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 1.125 INCHES NOMINAL |
AGAV | END ITEM IDENTIFICATION | FA-18 |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE AND 150.00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ANY ACCEPTABLE |
CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON |
TTQY | TERMINAL TYPE AND QUANTITY | 3 SCREW |
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 3.620 INCHES NOMINAL |
ABKW | OVERALL HEIGHT | 1.125 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 1.125 INCHES NOMINAL |
AGAV | END ITEM IDENTIFICATION | FA-18 |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 150.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE AND 150.00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ANY ACCEPTABLE |
CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON |
TTQY | TERMINAL TYPE AND QUANTITY | 3 SCREW |