MRC | Criteria | Characteristic |
---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND MONOLITHIC |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 BUFFER AND 2 DRIVER, LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND MONOLITHIC |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CSSL | DESIGN FUNCTION AND QUANTITY | 2 BUFFER AND 2 DRIVER, LINE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |