MRC | Criteria | Characteristic |
---|
ADAQ | BODY LENGTH | 1.185 INCHES MINIMUM AND 1.215 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.570 INCHES MINIMUM AND 0.605 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.145 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS" |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | ANADIGTESTER E/I FSCM 88818" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE AND ERASABLE AND LOW POWER AND PROGRAMMABLE AND PROGRAMMED" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
CZZZ | MEMORY CAPACITY | UNKNOWN" |
TEST | TEST DATA DOCUMENT | 88818-A398A033T1021 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNIN" |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
ADAQ | BODY LENGTH | 1.185 INCHES MINIMUM AND 1.215 INCHES MAXIMUM" |
ADAT | BODY WIDTH | 0.570 INCHES MINIMUM AND 0.605 INCHES MAXIMUM" |
ADAU | BODY HEIGHT | 0.145 INCHES MAXIMUM" |
AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS" |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
AGAV | END ITEM IDENTIFICATION | ANADIGTESTER E/I FSCM 88818" |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ELECTROSTATIC SENSITIVE AND ERASABLE AND LOW POWER AND PROGRAMMABLE AND PROGRAMMED" |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC" |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE" |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
CZER | MEMORY DEVICE TYPE | ROM" |
CZZZ | MEMORY CAPACITY | UNKNOWN" |
TEST | TEST DATA DOCUMENT | 88818-A398A033T1021 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNIN" |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |