MRC | Criteria | Characteristic |
---|
AFGA | OPERATING TEMP RANGE | -40.0 TO 85.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
CQSJ | INCLOSURE MATERIAL | PLASTIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CRHL | BIT QUANTITY | 144" |
CSSL | DESIGN FUNCTION AND QUANTITY | 1 MEMORY, ELECTRICALLY ERASABLE PROGRAMMABLE ROM" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | HIGH PERFORMANCE CMOS EPROM" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM INPUT" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 12.0 INPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 120.0 NANOSECONDS NOMINAL ACCESS" |
FEAT | SPECIAL FEATURES | 6 MODES INCLUDE: READ, OUTPUT DISABLE, STANDBY, PROGRAMMING, PROGRAM VERIFY AND PROGRAM INHIBIT" |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |
AFGA | OPERATING TEMP RANGE | -40.0 TO 85.0 DEG CELSIUS" |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
CQSJ | INCLOSURE MATERIAL | PLASTIC" |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
CRHL | BIT QUANTITY | 144" |
CSSL | DESIGN FUNCTION AND QUANTITY | 1 MEMORY, ELECTRICALLY ERASABLE PROGRAMMABLE ROM" |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | HIGH PERFORMANCE CMOS EPROM" |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM INPUT" |
CZEP | CAPITANCE RATING PER CHARACTERISTIC | 12.0 INPUT PICOFARADS MAXIMUM" |
CZEQ | TIME RATING PER CHACTERISTIC | 120.0 NANOSECONDS NOMINAL ACCESS" |
FEAT | SPECIAL FEATURES | 6 MODES INCLUDE: READ, OUTPUT DISABLE, STANDBY, PROGRAMMING, PROGRAM VERIFY AND PROGRAM INHIBIT" |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |