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1818-0506 Part of Agilent Technologies Inc with NSN 5962011592682 - Buy Now

Part No. : 1818-0506
Alternate P/N: 18180506
Manufacturer : agilent technologies inc
CAGE Code : 1LQK8
Item Name : microcircuit memory
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Part Number 1818-0506 having (CAGE Code 1LQK8) and FSC 5962 Microcircuits Electronic in stock with ready to ship. Get an instant quote for 1818-0506 Microcircuit Memory by Agilent Technologies Inc. Fill the form below with your desired order quantity, targeted price and the expected order-fulfilment date. Our dedicated account manager will get back to you within 15 minutes.


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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number 1818-0506 with NSN 5962-01-159-2682, 5962011592682

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-159-2682

Item Description:

Microcircuit Memory

59620115926820NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
1818-0506223

Characteristics Data of NSN 5962-01-159-2682, 5962011592682

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH1 240 INCHES MINIMUM AND 1 255 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 545 INCHES MINIMUM AND 0 555 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 145 INCHES MINIMUM AND 0 155 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE0 0 TO 70 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDED3-STATE OUTPUT AND PROGRAMMABLE AND HIGH PERFORMANCE AND ERASABLE
MEMORYCQSJINCLOSURE MATERIALPLASTIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN12 INPUT
MEMORYCRHLBIT QUANTITY8192
MEMORYCSWJWORD QUANTITY1024
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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