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Advanced Micro Devices Inc DH75699 Part with NSN 5962011717451 - Quote Now

Part No. : DH75699
CAGE Code : 34335
NIIN : 01-171-7451
Item Name : microcircuit memory
INC Code : 41015
NCB Code : 01
Country : USA
NA

Thank you for having an interest in our selection of Advanced Micro Devices Inc products here on ASAP AOG. You have reached the Request for Quote (RFQ) page for part number DH75699, where you can submit details on your needs to receive tailored pricing and procurement options from our staff. Before you get started, be sure to review the information below to confirm the details of this part number DH75699. If you have any questions, we are always available by phone or email.

Part Number DH75699 Details:
 
Part number DH75699 traces back to Advanced Micro Devices Inc through the CAGE Code (CAGE Code 34335), commonly listed with the item name Microcircuit Memory. Classified with the NSN 5962011717451, this part number has the NIIN 011717451, the INC 41015, and NCB code 01 (USA). For further details, this component belongs to the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Federal Supply Class (FSC) 5962 Microcircuits Electronic.


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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number DH75699 with NSN 5962-01-171-7451, 5962011717451

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-171-7451

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620117174510NB
CIICHCCESDPMICCriticalityENAC
UBG0
Part NumberISCRNVCRNCCHCCMSDSSADC
19118295

Characteristics Data of NSN 5962-01-171-7451, 5962011717451

MRCCriteriaCharacteristic
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
CZERMEMORY DEVICE TYPEROM
PMLCPRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE OPTION GOLD
PRMTPRECIOUS MATERIALGOLD
TESTTEST DATA DOCUMENT82577-932750 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTING GE
TTQYTERMINAL TYPE AND QUANTITY18 FLAT LEADS
ADAQBODY LENGTH0.335 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
ADATBODY WIDTH0.335 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
ADAUBODY HEIGHT0.090 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1225.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDBIPOLAR AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND BURN IN
CQSJINCLOSURE MATERIALCERAMIC OR METAL
CQSZINCLOSURE CONFIGURATIONFLAT PACK
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTGOLD

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