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Advanced Micro Devices Inc 31L01DM Part with NSN 5962005840669 - Quote Now

Part No. : 31L01DM
CAGE Code : 34335
NIIN : 00-584-0669
Item Name : microcircuit memory
INC Code : 41015
NCB Code : 00
Country : USA
NA

Thank you for having an interest in our selection of Advanced Micro Devices Inc products here on ASAP AOG. You have reached the Request for Quote (RFQ) page for part number 31L01DM, where you can submit details on your needs to receive tailored pricing and procurement options from our staff. Before you get started, be sure to review the information below to confirm the details of this part number 31L01DM. If you have any questions, we are always available by phone or email.

Part Number 31L01DM Details:
 
Part number 31L01DM traces back to Advanced Micro Devices Inc through the CAGE Code (CAGE Code 34335), commonly listed with the item name Microcircuit Memory. Classified with the NSN 5962005840669, this part number has the NIIN 005840669, the INC 41015, and NCB code 00 (USA). For further details, this component belongs to the Federal Supply Group (FSG) 59 Electrical and Electronic Equipment Components and Federal Supply Class (FSC) 5962 Microcircuits Electronic.


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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number 31L01DM with NSN 5962-00-584-0669, 5962005840669

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-00-584-0669

Item PartTypeName:

MICROCIRCUIT,MEMORY

5962005840669NB
CIICHCCESDPMICCriticalityENAC
BU
Part NumberISCRNVCRNCCHCCMSDSSADC
AM31L01E11C

Characteristics Data of NSN 5962-00-584-0669, 5962005840669

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
ADATBODY WIDTH0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
ADAUBODY HEIGHT0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDMONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND LOW POWER AND SCHOTTKY AND W/BUFFERED OUTPUT AND EXPANDABLE AND W/OPEN COLLECTOR AND W/STORAGE AND WIRE-OR OUTPUTS
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN10 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME,HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

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