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NSN 5962-01-247-5648 (5962012475648) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-247-5648 is an Microcircuit Memory produced by A G H Industries Inc, St Microelectronics, Integrated Device Technology Inc, Intersil Corporation, Cypress Memory. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-247-5648 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by A G H Industries Inc, St Microelectronics, Integrated Device Technology Inc, Intersil Corporation, Cypress Memory that carries the NSN 5962-01-247-5648, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962012475648 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5962-01-247-5648
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NCB Code: USA (01)
Manufacturers: A G H Industries Inc, Cypress Memory, Dla Land And Maritime, Hamilton Sundstrand Corporation, Integrated Device Technology Inc, Intersil Corporation, Paeaeesikunta Logistiikkaosasto, Rockwell Collins Inc, St Microelectronics

Part Number's List for NSN 5962-01-247-5648

Part No.
Manufacturer
Item Name
Availability
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ

Technical Characteristics of NSN 5962012475648

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.290 INCHES MAXIMUM
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
ADAUBODY HEIGHT0.150 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATION6660-01-153-1269 CLOUD HEIGHT SE
CBBLFEATURES PROVIDEDMONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZPINPUT CIRCUIT PATTERN22 INPUT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPERAM
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT