NSN 5962-01-217-4206 (5962012174206) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-217-4206 is an Microcircuit Memory produced by Fluke Corporation, Dla Land And Maritime, Nec Electronics Usa Inc Electron. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-217-4206 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Fluke Corporation, Dla Land And Maritime, Nec Electronics Usa Inc Electron that carries the NSN 5962-01-217-4206, you can rely on us to provide you with the necessary parts from our available inventory.

At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962012174206 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 300 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 520 INCHES NOMINAL
MEMORY	ADAU	BODY HEIGHT0 205 INCHES MAXIMUM
MEMORY	AFGA	OPERATING TEMP RANGE-25 0 TO 75 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND MONOLITHIC AND ULTRAVIOLET ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN17 INPUT
MEMORY	CRHL	BIT QUANTITY131072
MEMORY	CSWJ	WORD QUANTITY16384
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT

MRC

Criteria

Characteristic

MEMORY

ADAQ

BODY LENGTH1 300 INCHES MAXIMUM

MEMORY

ADAT

BODY WIDTH0 520 INCHES NOMINAL

MEMORY

ADAU

BODY HEIGHT0 205 INCHES MAXIMUM

MEMORY

AFGA

OPERATING TEMP RANGE-25 0 TO 75 0 DEG CELSIUS

MEMORY

AFJQ

STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS

MEMORY

CBBL

FEATURES PROVIDEDPROGRAMMABLE AND MONOLITHIC AND ULTRAVIOLET ERASABLE

MEMORY

CQSJ

INCLOSURE MATERIALCERAMIC

MEMORY

CQSZ

INCLOSURE CONFIGURATIONDUAL-IN-LINE

MEMORY

CQWX

OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC

MEMORY

CQZP

INPUT CIRCUIT PATTERN17 INPUT

MEMORY

CRHL

BIT QUANTITY131072

MEMORY

CSWJ

WORD QUANTITY16384

MEMORY

CWSG

TERMINAL SURFACE TREATMENTSOLDER

MEMORY

CZEN

VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE

MEMORY

CZEQ

TIME RATING PER CHACTERISTIC250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT

MEMORY

CZER

MEMORY DEVICE TYPEROM

MEMORY

TEST

TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC

MEMORY

TTQY

TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT

NSN 5962-01-217-4206 (5962012174206) Microcircuit Memory Parts Catalog

Manufacturer’s List for NSN 5962-01-217-4206

Part Number's List for NSN 5962-01-217-4206

Technical Characteristics of NSN 5962012174206

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