NSN 5962-01-186-5714 (5962011865714) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-186-5714 is an Microcircuit Memory produced by Miscellaneous. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-186-5714 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Miscellaneous that carries the NSN 5962-01-186-5714, you can rely on us to provide you with the necessary parts from our available inventory.

At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962011865714 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES NOMINAL
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING729 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRADAR SYSTEM ANFPS-117
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

MRC

Criteria

Characteristic

MEMORY

ADAQ

BODY LENGTH0 840 INCHES MAXIMUM

MEMORY

ADAT

BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM

MEMORY

ADAU

BODY HEIGHT0 185 INCHES NOMINAL

MEMORY

AEHX

MAXIMUM POWER DISSIPATION RATING729 0 MILLIWATTS

MEMORY

AFGA

OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS

MEMORY

AFJQ

STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS

MEMORY

AGAV

END ITEM IDENTIFICATIONRADAR SYSTEM ANFPS-117

MEMORY

CBBL

FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY

MEMORY

CQSJ

INCLOSURE MATERIALCERAMIC AND GLASS

MEMORY

CQSZ

INCLOSURE CONFIGURATIONDUAL-IN-LINE

MEMORY

CQWX

OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC

MEMORY

CQZP

INPUT CIRCUIT PATTERN10 INPUT

MEMORY

CTFT

CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510

MEMORY

CWSG

TERMINAL SURFACE TREATMENTSOLDER

MEMORY

CZEN

VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE

MEMORY

CZEQ

TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT

MEMORY

CZER

MEMORY DEVICE TYPEROM

MEMORY

CZZZ

MEMORY CAPACITYUNKNOWN

MEMORY

TTQY

TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

NSN 5962-01-186-5714 (5962011865714) Microcircuit Memory Parts Catalog

Manufacturer’s List for NSN 5962-01-186-5714

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