Search By:
Thanks for Visiting Us At ASAP AOG!

Thanks for Visiting Us At ASAP AOG! Before You Go, Why Not Take a Look at Our Aircraft Parts Catalog? You Can Get One of the Most Competitive Quotes On the Market In 15 Minutes Or Less.

Request for Quote

We use cookies to ensure that we give you an amazing experience on our website. If you continue to use this site we will assume that you are happy with it.

NSN 5962-01-185-9617 (5962011859617) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-185-9617 is an Microcircuit Memory produced by Dla Land And Maritime, Miscellaneous. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-185-9617 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Dla Land And Maritime, Miscellaneous that carries the NSN 5962-01-185-9617, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962011859617 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5962-01-185-9617
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NCB Code: USA (01)
Manufacturers: Dla Land And Maritime, Miscellaneous

Manufacturer’s List for NSN 5962-01-185-9617

dla land and maritime miscellaneous

Part Number's List for NSN 5962-01-185-9617

Part No.
Manufacturer
Item Name
Availability
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ

Technical Characteristics of NSN 5962011859617

MRCCriteriaCharacteristic
ADAQBODY LENGTH1.290 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.210 INCHES NOMINAL"
AEHXMAXIMUM POWER DISSIPATION RATING1.02 WATTS"
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONRADAR SYSTEM AN/FPS-117"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY"
CQSJINCLOSURE MATERIALCERAMIC AND GLASS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN14 INPUT"
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQTIME RATING PER CHACTERISTIC100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZERMEMORY DEVICE TYPEROM"
CZZZMEMORY CAPACITYUNKNOWN"
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT"
ADAQBODY LENGTH1.290 INCHES MAXIMUM"
ADATBODY WIDTH0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM"
ADAUBODY HEIGHT0.210 INCHES NOMINAL"
AEHXMAXIMUM POWER DISSIPATION RATING1.02 WATTS"
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS"
AGAVEND ITEM IDENTIFICATIONRADAR SYSTEM AN/FPS-117"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY"
CQSJINCLOSURE MATERIALCERAMIC AND GLASS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN14 INPUT"
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQTIME RATING PER CHACTERISTIC100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZERMEMORY DEVICE TYPEROM"
CZZZMEMORY CAPACITYUNKNOWN"
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT"