NSN 5962-01-161-3477 (5962011613477) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-161-3477 is an Microcircuit Memory produced by Dla Land And Maritime, Philips Semiconductors Inc, Miscellaneous. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-161-3477 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Dla Land And Maritime, Philips Semiconductors Inc, Miscellaneous that carries the NSN 5962-01-161-3477, you can rely on us to provide you with the necessary parts from our available inventory.

At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962011613477 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.

MRC	Criteria	Characteristic
ADAQ	BODY LENGTH	0.840 INCHES MAXIMUM"
ADAT	BODY WIDTH	0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM"
ADAU	BODY HEIGHT	0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM"
AEHX	MAXIMUM POWER DISSIPATION RATING	739.0 MILLIWATTS"
AFGA	OPERATING TEMP RANGE	-55.0/+125.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-65.0/+150.0 DEG CELSIUS"
AGAV	END ITEM IDENTIFICATION	RADAR SYSTEM,TYPE AN/FPS-117"
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED AND MONOLITHIC AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND PROGRAMMABLE AND BIPOLAR"
CQSJ	INCLOSURE MATERIAL	CERAMIC AND GLASS"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC"
CQZP	INPUT CIRCUIT PATTERN	10 INPUT"
CTFT	CASE OUTLINE SOURCE AND DESIGNATOR	D-2 MIL-M-38510"
CWSG	TERMINAL SURFACE TREATMENT	SOLDER"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQ	TIME RATING PER CHACTERISTIC	75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZER	MEMORY DEVICE TYPE	ROM"
CZZZ	MEMORY CAPACITY	UNKNOWN"
TTQY	TERMINAL TYPE AND QUANTITY	16 PRINTED CIRCUIT"
ADAQ	BODY LENGTH	0.840 INCHES MAXIMUM"
ADAT	BODY WIDTH	0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM"
ADAU	BODY HEIGHT	0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM"
AEHX	MAXIMUM POWER DISSIPATION RATING	739.0 MILLIWATTS"
AFGA	OPERATING TEMP RANGE	-55.0/+125.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-65.0/+150.0 DEG CELSIUS"
AGAV	END ITEM IDENTIFICATION	RADAR SYSTEM,TYPE AN/FPS-117"
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED AND MONOLITHIC AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND PROGRAMMABLE AND BIPOLAR"
CQSJ	INCLOSURE MATERIAL	CERAMIC AND GLASS"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC"
CQZP	INPUT CIRCUIT PATTERN	10 INPUT"
CTFT	CASE OUTLINE SOURCE AND DESIGNATOR	D-2 MIL-M-38510"
CWSG	TERMINAL SURFACE TREATMENT	SOLDER"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQ	TIME RATING PER CHACTERISTIC	75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZER	MEMORY DEVICE TYPE	ROM"
CZZZ	MEMORY CAPACITY	UNKNOWN"
TTQY	TERMINAL TYPE AND QUANTITY	16 PRINTED CIRCUIT"

MRC

Criteria

Characteristic

ADAQ

BODY LENGTH

0.840 INCHES MAXIMUM"

ADAT

BODY WIDTH

0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM"

ADAU

BODY HEIGHT

0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM"

AEHX

MAXIMUM POWER DISSIPATION RATING

739.0 MILLIWATTS"

AFGA

OPERATING TEMP RANGE

-55.0/+125.0 DEG CELSIUS"

AFJQ

STORAGE TEMP RANGE

-65.0/+150.0 DEG CELSIUS"

AGAV

END ITEM IDENTIFICATION

RADAR SYSTEM,TYPE AN/FPS-117"

CBBL

FEATURES PROVIDED

HERMETICALLY SEALED AND MONOLITHIC AND HIGH IMPEDANCE AND 3-STATE OUTPUT AND PROGRAMMABLE AND BIPOLAR"

CQSJ

INCLOSURE MATERIAL

CERAMIC AND GLASS"

CQSZ

INCLOSURE CONFIGURATION

DUAL-IN-LINE"

CQWX

OUTPUT LOGIC FORM

TRANSISTOR-TRANSISTOR LOGIC"

CQZP

INPUT CIRCUIT PATTERN

10 INPUT"

CTFT

CASE OUTLINE SOURCE AND DESIGNATOR

D-2 MIL-M-38510"

CWSG

TERMINAL SURFACE TREATMENT

SOLDER"

CZEN

VOLTAGE RATING AND TYPE PER CHARACTERISTIC

5.5 VOLTS MAXIMUM POWER SOURCE"

CZEQ

TIME RATING PER CHACTERISTIC

75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"

CZER

MEMORY DEVICE TYPE

ROM"

CZZZ

MEMORY CAPACITY

UNKNOWN"

TTQY

TERMINAL TYPE AND QUANTITY

16 PRINTED CIRCUIT"