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NSN 5962-01-111-4923 (5962011114923) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-111-4923 is an Microcircuit Memory produced by Dla Land And Maritime, Edo Corporation, Edo Corp Div Edo Corporation Ant, Electro Switch Corp. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-111-4923 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Dla Land And Maritime, Edo Corporation, Edo Corp Div Edo Corporation Ant, Electro Switch Corp that carries the NSN 5962-01-111-4923, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962011114923 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5962-01-111-4923
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NCB Code: USA (01)
Manufacturers: Dla Land And Maritime, Edo Corp Div Edo Corporation Ant, Edo Corporation, Electro Switch Corp

Part Number's List for NSN 5962-01-111-4923

Part No.
Manufacturer
Item Name
Availability
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ

Technical Characteristics of NSN 5962011114923

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM"
ADATBODY WIDTH0.310 INCHES MAXIMUM"
ADAUBODY HEIGHT0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING770.0 MILLIWATTS"
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE"
CQSJINCLOSURE MATERIALCERAMIC AND GLASS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN12 INPUT"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE"
CZERMEMORY DEVICE TYPEROM"
CZZZMEMORY CAPACITYUNKNOWN"
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT"
ADAQBODY LENGTH0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM"
ADATBODY WIDTH0.310 INCHES MAXIMUM"
ADAUBODY HEIGHT0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM"
AEHXMAXIMUM POWER DISSIPATION RATING770.0 MILLIWATTS"
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS"
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE"
CQSJINCLOSURE MATERIALCERAMIC AND GLASS"
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE"
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC"
CQZPINPUT CIRCUIT PATTERN12 INPUT"
CWSGTERMINAL SURFACE TREATMENTSOLDER"
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE"
CZERMEMORY DEVICE TYPEROM"
CZZZMEMORY CAPACITYUNKNOWN"
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT"