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NSN 5962-01-083-5164 (5962010835164) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-083-5164 is an Microcircuit Memory produced by Raytheon Co, Mcdonnell Douglas Co, Philips Semiconductors Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-083-5164 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Raytheon Co, Mcdonnell Douglas Co, Philips Semiconductors Inc that carries the NSN 5962-01-083-5164, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962010835164 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5962-01-083-5164
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NCB Code: USA (01)
Manufacturers: Mcdonnell Douglas Co, Philips Semiconductors Inc, Raytheon Co

Manufacturer’s List for NSN 5962-01-083-5164

mcdonnell douglas co philips semiconductors inc raytheon co

Part Number's List for NSN 5962-01-083-5164

Part No.
Manufacturer
Item Name
Availability
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ

Technical Characteristics of NSN 5962010835164

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
ADATBODY WIDTH0.302 INCHES MAXIMUM
ADAUBODY HEIGHT0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
AFGAOPERATING TEMP RANGE+0.0/+75.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND POSITIVE OUTPUTS
CQSJINCLOSURE MATERIALCERAMIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT