NSN 5962-01-075-6886 (5962010756886) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-075-6886 is an Microcircuit Memory produced by Dla Land And Maritime, Mmi Amd, Intersil Corporation, Advanced Micro Devices Inc, Philips Semiconductors Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-075-6886 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Dla Land And Maritime, Mmi Amd, Intersil Corporation, Advanced Micro Devices Inc, Philips Semiconductors Inc that carries the NSN 5962-01-075-6886, you can rely on us to provide you with the necessary parts from our available inventory.

At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962010756886 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.

MRC	Criteria	Characteristic
ADAQ	BODY LENGTH	0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM"
ADAT	BODY WIDTH	0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM"
ADAU	BODY HEIGHT	0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM"
AFGA	OPERATING TEMP RANGE	-55.0/+125.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-65.0/+150.0 DEG CELSIUS"
CBBL	FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT"
CQSJ	INCLOSURE MATERIAL	CERAMIC AND GLASS"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC"
CQZP	INPUT CIRCUIT PATTERN	12 INPUT"
CWSG	TERMINAL SURFACE TREATMENT	SOLDER"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQ	TIME RATING PER CHACTERISTIC	85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZER	MEMORY DEVICE TYPE	ROM"
CZZZ	MEMORY CAPACITY	UNKNOWN"
TEST	TEST DATA DOCUMENT	82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)."
TTQY	TERMINAL TYPE AND QUANTITY	18 PRINTED CIRCUIT"
ADAQ	BODY LENGTH	0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM"
ADAT	BODY WIDTH	0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM"
ADAU	BODY HEIGHT	0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM"
AFGA	OPERATING TEMP RANGE	-55.0/+125.0 DEG CELSIUS"
AFJQ	STORAGE TEMP RANGE	-65.0/+150.0 DEG CELSIUS"
CBBL	FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT"
CQSJ	INCLOSURE MATERIAL	CERAMIC AND GLASS"
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE"
CQWX	OUTPUT LOGIC FORM	TRANSISTOR-TRANSISTOR LOGIC"
CQZP	INPUT CIRCUIT PATTERN	12 INPUT"
CWSG	TERMINAL SURFACE TREATMENT	SOLDER"
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	5.5 VOLTS MAXIMUM POWER SOURCE"
CZEQ	TIME RATING PER CHACTERISTIC	85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"
CZER	MEMORY DEVICE TYPE	ROM"
CZZZ	MEMORY CAPACITY	UNKNOWN"
TEST	TEST DATA DOCUMENT	82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)."
TTQY	TERMINAL TYPE AND QUANTITY	18 PRINTED CIRCUIT"

MRC

Criteria

Characteristic

ADAQ

BODY LENGTH

0.850 INCHES MINIMUM AND 0.930 INCHES MAXIMUM"

ADAT

BODY WIDTH

0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM"

ADAU

BODY HEIGHT

0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM"

AFGA

OPERATING TEMP RANGE

-55.0/+125.0 DEG CELSIUS"

AFJQ

STORAGE TEMP RANGE

-65.0/+150.0 DEG CELSIUS"

CBBL

FEATURES PROVIDED

ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND BIPOLAR AND PROGRAMMED AND W/DECODED OUTPUT AND 3-STATE OUTPUT"

CQSJ

INCLOSURE MATERIAL

CERAMIC AND GLASS"

CQSZ

INCLOSURE CONFIGURATION

DUAL-IN-LINE"

CQWX

OUTPUT LOGIC FORM

TRANSISTOR-TRANSISTOR LOGIC"

CQZP

INPUT CIRCUIT PATTERN

12 INPUT"

CWSG

TERMINAL SURFACE TREATMENT

SOLDER"

CZEN

VOLTAGE RATING AND TYPE PER CHARACTERISTIC

5.5 VOLTS MAXIMUM POWER SOURCE"

CZEQ

TIME RATING PER CHACTERISTIC

85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT"

CZER

MEMORY DEVICE TYPE

ROM"

CZZZ

MEMORY CAPACITY

UNKNOWN"

TEST

TEST DATA DOCUMENT

82577-932883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.)."

TTQY

TERMINAL TYPE AND QUANTITY

18 PRINTED CIRCUIT"