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NSN 5962-01-052-3835 (5962010523835) Microcircuit Memory Parts Catalog

The part belongs to NSN 5962-01-052-3835 is an Microcircuit Memory produced by Mmi Amd, Raytheon Co, Mcdonnell Douglas Co, Advanced Micro Devices Inc, National Semiconductor Corp. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5962-01-052-3835 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Microcircuit Memory made by Mmi Amd, Raytheon Co, Mcdonnell Douglas Co, Advanced Micro Devices Inc, National Semiconductor Corp that carries the NSN 5962-01-052-3835, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5962010523835 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5962-01-052-3835
Item Name: Microcircuit Memory
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NCB Code: USA (01)
Manufacturers: Advanced Micro Devices Inc, Intersil Corporation, Mcdonnell Douglas Co, Mmi Amd, National Semiconductor Corp, Philips Semiconductors Inc, Raytheon Co

Part Number's List for NSN 5962-01-052-3835

Part No.
Manufacturer
Item Name
Availability
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ
Microcircuit Memory
YES
RFQ

Technical Characteristics of NSN 5962010523835

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH1 240 INCHES MINIMUM AND 1 280 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 520 INCHES MINIMUM AND 0 580 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 060 INCHES MINIMUM AND 0 210 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE0 075 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDHIGH SPEED AND HIGH CURRENT AND 3-STATE OUTPUT AND PROGRAMMED AND MONOLITHIC
MEMORYCQSJINCLOSURE MATERIALPLASTIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN13 INPUT
MEMORYCRHLBIT QUANTITY4096
MEMORYCSWJWORD QUANTITY512
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC5 00 MILLIAMPERES REVERSE CURRENT DC MICROAMPERES
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEPCAPITANCE RATING PER CHARACTERISTIC4 00 INPUT PICOFARADS MAXIMUM AND 8 00 OUTPUT PICOFARADS MAXIMUM
MEMORYCZEQTIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM ACCESS
MEMORYCZERMEMORY DEVICE TYPEPROM
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT