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NSN 5961-01-439-2392 (5961014392392) Transistor Parts Catalog

The part belongs to NSN 5961-01-439-2392 is an Transistor produced by Sertech Laboratories Inc, Microsemi Corp Massachusetts, General Dynamics C4 Systems Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-439-2392 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Transistor made by Sertech Laboratories Inc, Microsemi Corp Massachusetts, General Dynamics C4 Systems Inc that carries the NSN 5961-01-439-2392, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961014392392 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-439-2392
Item Name: Transistor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: General Dynamics C4 Systems Inc, Microsemi Corp Massachusetts, Sertech Laboratories Inc

Manufacturer’s List for NSN 5961-01-439-2392

general dynamics c4 systems inc microsemi corp massachusetts sertech laboratories inc

Part Number's List for NSN 5961-01-439-2392

Part No.
Manufacturer
Item Name
Availability
RFQ

Technical Characteristics of NSN 5961014392392

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALCERAMIC
ABHPOVERALL LENGTH0.180 INCHES NOMINAL
ABKWOVERALL HEIGHT0.065 INCHES MAXIMUM
ABMKOVERALL WIDTH0.180 INCHES NOMINAL
AGAVEND ITEM IDENTIFICATIONAN/PRC-114(V) E/I FSCM 04655
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODCOMPRESSION
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.00 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE
CTRDPOWER RATING PER CHARACTERISTIC1.2 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION
PMLCPRECIOUS MATERIAL AND LOCATIONPLATED LEADS GOLD
TESTTEST DATA DOCUMENT04655-13-2728240 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D
TTQYTERMINAL TYPE AND QUANTITY16 CASE