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NSN 5961-01-331-3186 (5961013313186) Semiconductor Device Set Parts Catalog

The part belongs to NSN 5961-01-331-3186 is an Semiconductor Device Set produced by Topaz Systems Inc, Fluke Corporation, Siliconix Incorporated Div Silic. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-331-3186 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Set made by Topaz Systems Inc, Fluke Corporation, Siliconix Incorporated Div Silic that carries the NSN 5961-01-331-3186, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961013313186 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-331-3186
Item Name: Semiconductor Device Set
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Fluke Corporation, Siliconix Incorporated Div Silic, Topaz Systems Inc

Manufacturer’s List for NSN 5961-01-331-3186

fluke corporation siliconix incorporated div silic topaz systems inc

Part Number's List for NSN 5961-01-331-3186

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Set
YES
RFQ
Semiconductor Device Set
YES
RFQ
Semiconductor Device Set
YES
RFQ

Technical Characteristics of NSN 5961013313186

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL ALL TRANSISTOR
ABHPOVERALL LENGTH0.170 INCHES MINIMUM ALL TRANSISTOR AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
ABJTTERMINAL LENGTH0.500 INCHES MINIMUM ALL TRANSISTOR
ADAVOVERALL DIAMETER0.208 INCHES MINIMUM ALL TRANSISTOR AND 0.238 INCHES MAXIMUM ALL TRANSISTOR
ALASINTERNAL CONFIGURATIONFIELD EFFECT ALL TRANSISTOR
ALATCHANNEL POLARITY AND CONTROL TYPE (NON-CORE)N-CHANNEL INSULATED GATE TYPE ALL TRANSISTOR
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-72 ALL TRANSISTOR
ASDDCOMPONENT FUNCTION RELATIONSHIPMATCHED
ASKACOMPONENT NAME AND QUANTITY2 TRANSISTOR
AXGYMOUNTING METHODTERMINAL ALL TRANSISTOR
AYQSTERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL ALL TRANSISTOR
BBJDFIELD FORCE EFFECT TYPEELECTROSTATIC CHARGE
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
CTMZSEMICONDUCTOR MATERIALSILICON ALL TRANSISTOR
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC10.0 MAXIMUM EMITTER TO BASE VOLTAGE, FLOATING POTENTIAL, DC WITH COLLECTOR BIASED IN REVERSE DIRECTION WITH RESPECT TO THE BASE ALL TRANSISTOR AND 15.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE ALL TRANSISTOR AND 15.0 MAXIMUM SOURCE TO SUBSTRATE
CTQXCURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE ALL TRANSISTOR
CTRDPOWER RATING PER CHARACTERISTIC300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR ALL TRANSISTOR
TTQYTERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD ALL TRANSISTOR