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NSN 5961-01-285-6685 (5961012856685) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-285-6685 is an Semiconductor Device Diode produced by Hewlett Packard Co, Avago Technologies, Skyworks Solutions Inc, Miscellaneous. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-285-6685 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Hewlett Packard Co, Avago Technologies, Skyworks Solutions Inc, Miscellaneous that carries the NSN 5961-01-285-6685, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961012856685 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-285-6685
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Avago Technologies, Hewlett Packard Co, Miscellaneous, Skyworks Solutions Inc

Manufacturer’s List for NSN 5961-01-285-6685

avago technologies hewlett packard co miscellaneous skyworks solutions inc

Part Number's List for NSN 5961-01-285-6685

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961012856685

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALCERAMIC"
ABHPOVERALL LENGTH0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM"
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC0.4 MAXIMUM FORWARD VOLTAGE, DC"
CTQXCURRENT RATING PER CHARACTERISTIC1.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET"
CTRDPOWER RATING PER CHARACTERISTIC300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION"
PMLCPRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES GOLD"
PRMTPRECIOUS MATERIALGOLD"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"
ABBHINCLOSURE MATERIALCERAMIC"
ABHPOVERALL LENGTH0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM"
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC0.4 MAXIMUM FORWARD VOLTAGE, DC"
CTQXCURRENT RATING PER CHARACTERISTIC1.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET"
CTRDPOWER RATING PER CHARACTERISTIC300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS JUNCTION"
PMLCPRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACES GOLD"
PRMTPRECIOUS MATERIALGOLD"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"