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NSN 5961-01-210-1785 (5961012101785) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-210-1785 is an Semiconductor Device Diode produced by Freescale Semiconductor Inc, Semicon Components Inc, International Rectifier, Hamilton Sundstrand Corporation, Sundstrand Corp. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-210-1785 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Freescale Semiconductor Inc, Semicon Components Inc, International Rectifier, Hamilton Sundstrand Corporation, Sundstrand Corp that carries the NSN 5961-01-210-1785, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961012101785 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-210-1785
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Freescale Semiconductor Inc, Hamilton Sundstrand Corporation, International Rectifier, Microsemi Corp Massachusetts, Microsemi Corpscottsdale, N A P Smd Technology Inc, Semicon Components Inc, Sundstrand Corp, Telcom Semiconductor Inc

Part Number's List for NSN 5961-01-210-1785

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961012101785

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.300 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.140 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC47.0 NOMINAL NOMINAL REGULATOR VOLTAGE
CTQSVOLTAGE TOLERANCE IN PERCENT-5.0/+5.0
CTQXCURRENT RATING PER CHARACTERISTIC0.05 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC AND 8.50 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL
CTRDPOWER RATING PER CHARACTERISTIC400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
FEATSPECIAL FEATURESHARDNESS CRITICAL PROCESS; JUNCTION PATTERN ARRANGEMENT: PN
NHCFNUCLEAR HARDNESS CRITICAL FEATUREHARDENED
TESTTEST DATA DOCUMENT00167-938D392 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD