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NSN 5961-01-168-3350 (5961011683350) Semiconductor Device Thyristor Parts Catalog

The part belongs to NSN 5961-01-168-3350 is an Semiconductor Device Thyristor produced by Microsemi Corp Massachusetts, General Electric Co Semiconduct, Semitronics Corp, Powerex Inc, Grimes Aerospace Company. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-168-3350 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Thyristor made by Microsemi Corp Massachusetts, General Electric Co Semiconduct, Semitronics Corp, Powerex Inc, Grimes Aerospace Company that carries the NSN 5961-01-168-3350, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961011683350 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-168-3350
Item Name: Semiconductor Device Thyristor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: General Electric Co Semiconduct, Grimes Aerospace Company, Microsemi Corp Massachusetts, Paeaeesikunta Logistiikkaosasto, Powerex Inc, Semitronics Corp

Part Number's List for NSN 5961-01-168-3350

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ
Semiconductor Device Thyristor
YES
RFQ

Technical Characteristics of NSN 5961011683350

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH1.328 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY1
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-64
AXGYMOUNTING METHODTHREADED STUD
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CCDGOVERALL WIDTH ACROSS FLATS0.562 INCHES MAXIMUM
CQJXNOMINAL THREAD SIZE0.250 INCHES
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC800.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 900.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC35.00 AMPERES FORWARD CURRENT, TOTAL RMS NANOAMPERES
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS AMBIENT AIR
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
THSDTHREAD SERIES DESIGNATORUNF
TTQYTERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 THREADED STUD