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NSN 5961-01-143-4999 (5961011434999) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-143-4999 is an Semiconductor Device Diode produced by L 3 Communications Corporation, Harris Corporation, Philips Semiconductors Inc, Philips Circuit Assemblies, British Sarozal Ltd. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-143-4999 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by L 3 Communications Corporation, Harris Corporation, Philips Semiconductors Inc, Philips Circuit Assemblies, British Sarozal Ltd that carries the NSN 5961-01-143-4999, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961011434999 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-143-4999
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: British Sarozal Ltd, Harris Corporation, L 3 Communications Corporation, Philips Circuit Assemblies, Philips Semiconductors Inc, Tektronix Inc

Part Number's List for NSN 5961-01-143-4999

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961011434999

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH21.700 INCHES MAXIMUM
ABJTTERMINAL LENGTH7.600 INCHES MAXIMUM
ABKWOVERALL HEIGHT4.500 INCHES MAXIMUM
ABMKOVERALL WIDTH10.300 INCHES MAXIMUM
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM NONREPETITIVE PEAK OFF-STATE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC7.00 AMPERES SOURCE CUTOFF CURRENT PRESET AND 12.00 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM OF STANDARD RANGE AND 80.00 AMPERES SOURCE CUTOFF CURRENT ABSOLUTE
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD