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NSN 5961-01-082-8912 (5961010828912) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-082-8912 is an Semiconductor Device Diode produced by Microsemi Corp Massachusetts, Semiconductor Components Industr, Freescale Semiconductor Inc, Pace Incorporated, Vishay. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-082-8912 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Microsemi Corp Massachusetts, Semiconductor Components Industr, Freescale Semiconductor Inc, Pace Incorporated, Vishay that carries the NSN 5961-01-082-8912, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961010828912 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-082-8912
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Freescale Semiconductor Inc, General Semiconductor Inc, Honeywell International Inc, Microsemi Corp Massachusetts, Pace Incorporated, Protek Devices Lp, Semiconductor Components Industr, St Microelectronics, Vishay

Part Number's List for NSN 5961-01-082-8912

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961010828912

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.360 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.100 INCHES MINIMUM
ADAVOVERALL DIAMETER0.190 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
AFZCFUNCTION FOR WHICH DESIGNEDTRANSIENT SUPPRESSOR
AXGYMOUNTING METHODTERMINAL
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC33.3 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 37.1 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 41.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
CTQXCURRENT RATING PER CHARACTERISTIC28.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL AND 10.00 MILLIAMPERES DRAIN CURRENT PASCAL
CTRDPOWER RATING PER CHARACTERISTIC5.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD