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NSN 5961-01-016-1936 (5961010161936) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-016-1936 is an Semiconductor Device Diode produced by Microsemi Corp Massachusetts, Micro Uspd Inc, Semic Rf Electronic Gmbh, Cober Electronics Inc, Frequency Electronics Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-016-1936 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Microsemi Corp Massachusetts, Micro Uspd Inc, Semic Rf Electronic Gmbh, Cober Electronics Inc, Frequency Electronics Inc that carries the NSN 5961-01-016-1936, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961010161936 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-016-1936
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Avago Technologies, Cober Electronics Inc, Fei Microwave Inc, Frequency Electronics Inc, Hewlett Packard Co, Micro Uspd Inc, Microsemi Corp Massachusetts, Motorola Inc, Rockwell Collins Inc, Semic Rf Electronic Gmbh, Thales Electronic Systems Gmbh

Part Number's List for NSN 5961-01-016-1936

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961010161936

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
AGAVEND ITEM IDENTIFICATIONSPRUANCE CLASS DD (963); AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; AIRBORNE MOBILE DIR AIR SPT CTL (21D), (02 JUL 83) (AN/UYQ-3A); VIRGINIA CLASS CGN (41); T-AKR 310 CLASS; FORRESTAL CLASS CV; SIRIUS CLASS T-AFS 8; DEFENSE COMMUNI
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CRTLCRITICALITY CODE JUSTIFICATIONFEAT
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC300.0 MAXIMUM REVERSE VOLTAGE, PEAK
CTRDPOWER RATING PER CHARACTERISTIC250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
FEATSPECIAL FEATURESWEAPON SYSTEM ESSENTIAL
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD