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NSN 5961-01-012-6693 (5961010126693) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-01-012-6693 is an Semiconductor Device Diode produced by Quadri Corp, Dynalec Corporation, Raytheon Co, Rockwell Collins Inc Div Govern, Rockwell Collins Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-012-6693 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Quadri Corp, Dynalec Corporation, Raytheon Co, Rockwell Collins Inc Div Govern, Rockwell Collins Inc that carries the NSN 5961-01-012-6693, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961010126693 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-012-6693
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Dynalec Corporation, Honeywell International Inc, Inspektorat Wsparcia Sil Zbrojnych, Micro Uspd Inc, Miscellaneous, Quadri Corp, Raytheon Co, Rockwell Collins Inc, Rockwell Collins Inc Div Govern, Siemens Energy And Automation Inc, Trw Electronic Components Division

Part Number's List for NSN 5961-01-012-6693

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961010126693

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CTQXCURRENT RATING PER CHARACTERISTIC35.00 AMPERES FORWARD CURRENT
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
TESTTEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION