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NSN 5961-00-789-3771 (5961007893771) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-00-789-3771 is an Semiconductor Device Diode produced by Thales Nederland, Drs Icas Llc, Agilent Technologies Inc, Hewlett Packard Co, Rohde And Schwarz Gmbh. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-00-789-3771 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Thales Nederland, Drs Icas Llc, Agilent Technologies Inc, Hewlett Packard Co, Rohde And Schwarz Gmbh that carries the NSN 5961-00-789-3771, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961007893771 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-00-789-3771
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (00)
Manufacturers: Agilent Technologies Inc, Ampex Systems Corp, Avago Technologies, Drs Icas Llc, H P Products Inc, Hewlett Packard Co, Miscellaneous, Rohde And Schwarz Gmbh, Selex Systems Integration Inc Di, Siemens Air Traffic Management, Thales Nederland

Part Number's List for NSN 5961-00-789-3771

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961007893771

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.170 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.076 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC150.0 MAXIMUM REVERSE VOLTAGE, PEAK
CTRDPOWER RATING PER CHARACTERISTIC250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CTRGCAPACITANCE RATING IN PICOFARADS0.25 MAXIMUM
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD