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NSN 5961-00-732-6199 (5961007326199) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-00-732-6199 is an Semiconductor Device Diode produced by Micro Uspd Inc, Raytheon Co. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-00-732-6199 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Micro Uspd Inc, Raytheon Co that carries the NSN 5961-00-732-6199, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961007326199 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-00-732-6199
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (00)
Manufacturers: Micro Uspd Inc, Raytheon Co

Manufacturer’s List for NSN 5961-00-732-6199

micro uspd inc raytheon co

Part Number's List for NSN 5961-00-732-6199

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961007326199

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH0.250 INCHES MAXIMUM"
ABJTTERMINAL LENGTH0.700 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.085 INCHES MAXIMUM"
AFZCFUNCTION FOR WHICH DESIGNEDZENER DIODE"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 NOMINAL NOMINAL REGULATOR VOLTAGE"
CTQSVOLTAGE TOLERANCE IN PERCENT-5.0/+5.0"
CTQXCURRENT RATING PER CHARACTERISTIC2.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC"
CTRDPOWER RATING PER CHARACTERISTIC3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH0.250 INCHES MAXIMUM"
ABJTTERMINAL LENGTH0.700 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.085 INCHES MAXIMUM"
AFZCFUNCTION FOR WHICH DESIGNEDZENER DIODE"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 NOMINAL NOMINAL REGULATOR VOLTAGE"
CTQSVOLTAGE TOLERANCE IN PERCENT-5.0/+5.0"
CTQXCURRENT RATING PER CHARACTERISTIC2.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC"
CTRDPOWER RATING PER CHARACTERISTIC3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"