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NSN 5961-00-231-3769 (5961002313769) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-00-231-3769 is an Semiconductor Device Diode produced by Electronic Industries Associatio, Woodward Governor Company, Miscellaneous, Microsemi Corporation, International Diode Corp. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-00-231-3769 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Electronic Industries Associatio, Woodward Governor Company, Miscellaneous, Microsemi Corporation, International Diode Corp that carries the NSN 5961-00-231-3769, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961002313769 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-00-231-3769
Item Name: Semiconductor Device Diode
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (00)
Manufacturers: C O D I Corp, Electronic Industries Associatio, Fairchild Semiconductor Corp, International Diode Corp, Microsemi Corporation, Miscellaneous, N A P Smd Technology Inc, Silicon Graphics Inc, Telcom Semiconductor Inc, Woodward Governor Company

Part Number's List for NSN 5961-00-231-3769

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961002313769

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS
ABHPOVERALL LENGTH0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM
ADAVOVERALL DIAMETER0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDBURN IN AND HERMETICALLY SEALED CASE
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC6.27 MINIMUM BREAKDOWN VOLTAGE, DC AND 6.93 MAXIMUM BREAKDOWN VOLTAGE, DC
CTQSVOLTAGE TOLERANCE IN PERCENT-5.0 TO 5.0
CTQXCURRENT RATING PER CHARACTERISTIC200.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
CTRDPOWER RATING PER CHARACTERISTIC0.250 WATTS MAXIMUM TOTAL POWER DISSIPATION
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ZZZKSPECIFICATION/STANDARD DATA80131-RELEASE5042 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION