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NSN 5961-00-121-9891 (5961001219891) Semiconductor Device Diode Parts Catalog

The part belongs to NSN 5961-00-121-9891 is an Semiconductor Device Diode produced by Electronic Industries Associatio, Burns Aerospace Corp, N A P Smd Technology Inc, Microsemi Corporation, International Diode Corp. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-00-121-9891 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Semiconductor Device Diode made by Electronic Industries Associatio, Burns Aerospace Corp, N A P Smd Technology Inc, Microsemi Corporation, International Diode Corp that carries the NSN 5961-00-121-9891, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961001219891 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Part Number's List for NSN 5961-00-121-9891

Part No.
Manufacturer
Item Name
Availability
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ
Semiconductor Device Diode
YES
RFQ

Technical Characteristics of NSN 5961001219891

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM"
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM"
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONDO-7"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE"
CTQXCURRENT RATING PER CHARACTERISTIC7.50 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM"
CTRDPOWER RATING PER CHARACTERISTIC500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"
ZZZKSPECIFICATION/STANDARD DATA80131-RELEASE3859 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION"
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM"
ABJTTERMINAL LENGTH1.000 INCHES MINIMUM"
ADAVOVERALL DIAMETER0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM"
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONDO-7"
AXGYMOUNTING METHODTERMINAL"
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE"
CTMZSEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC9.0 MAXIMUM NOMINAL REGULATOR VOLTAGE"
CTQXCURRENT RATING PER CHARACTERISTIC7.50 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT MINIMUM"
CTRDPOWER RATING PER CHARACTERISTIC500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET"
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD"
ZZZKSPECIFICATION/STANDARD DATA80131-RELEASE3859 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION"