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NSN 5961-01-383-8375 (5961013838375) Transistor Parts Catalog

The part belongs to NSN 5961-01-383-8375 is an Transistor produced by Thales Communications Inc, Diodes Inc. This specific NSN is a numeric identifier assigned by the Defense Logistics Agency (DLA) to categorize all products distributed by the NATO federal supply chain. At ASAP AOG, a company owned and operated by ASAP Semiconductor, we possess parts that belong to the NSN 5961-01-383-8375 and these are readily available in our current inventory. Our on-hand inventory contains parts belonging to this particular NSN that you can easily access. So, if you need an Transistor made by Thales Communications Inc, Diodes Inc that carries the NSN 5961-01-383-8375, you can rely on us to provide you with the necessary parts from our available inventory.


At ASAP AOG, we are dedicated to providing competitive quotes for premium NATO parts. We work hard to ensure all the national stock number 5961013838375 parts are fully certified and up to standard. Our supply chain is extensive and one of the fastest in the industry. Have a question or need a quote today? Simply fill out the RFQ below.


Alternative NSN: 5961-01-383-8375
Item Name: Transistor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NCB Code: USA (01)
Manufacturers: Diodes Inc, Thales Communications Inc

Manufacturer’s List for NSN 5961-01-383-8375

diodes inc thales communications inc

Part Number's List for NSN 5961-01-383-8375

Part No.
Manufacturer
Item Name
Availability
RFQ
Transistor
YES
RFQ

Technical Characteristics of NSN 5961013838375

MRCCriteriaCharacteristic
ABHPOVERALL LENGTH2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
ABMKOVERALL WIDTH2.5 MILLIMETERS MAXIMUM
CTQXCURRENT RATING PER CHARACTERISTIC0.06 AMPERES MAXIMUM DRAIN CURRENT AND 1.00 AMPERES MAXIMUM OFF-STATE CURRENT
CTRDPOWER RATING PER CHARACTERISTIC0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
TTQYTERMINAL TYPE AND QUANTITY3 TAB
ABBHINCLOSURE MATERIALPLASTIC
ABKWOVERALL HEIGHT1.1 MILLIMETERS MAXIMUM
ALASINTERNAL CONFIGURATIONFIELD EFFECT
AXGYMOUNTING METHODTERMINAL
CTMZSEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM ON-STATE DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR